Influence of partial charge on the material removal rate during chemical polishing
نویسندگان
چکیده
منابع مشابه
Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling
The abrasion mechanism in solid-solid contact mode of the chemical mechanical polishing (CMP) process is investigated in detail. Based on assumptions of plastic contact over wafer-abrasive and pad-abrasive interfaces, the normal distribution of abrasive size and an assumed periodic roughness of pad surface, a novel model is developed for material removal in CMP. The basic model is = removed, wh...
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ژورنال
عنوان ژورنال: Journal of the American Ceramic Society
سال: 2018
ISSN: 0002-7820,1551-2916
DOI: 10.1111/jace.15995